G.SKILL International Enterprise Co., Ltd., the world's leading brand of performance overclock memory and PC components, is announcing the release of Ripjaws M5 RGB, a high-performance RGB DDR5 memory series designed for the latest DDR5-enabled Intel platforms. At launch, initial specifications will be offered up to DDR5-6400 CL32-39-39-102 96 GB (2x48GB). Available in matte black or matte white aluminium heatspreaders and features customizable RGB lighting, the Ripjaws M5 RGB is an ideal memory kit for a wide variety of PC builds and themes.

Designed for Stylish Performance
Available in matte white or matte black aluminium heatspreaders and standing at 41 mm tall, the Ripjaws M5 RGB series is designed for a minimalistic look and features customizable RGB lighting to match a wide variety of PC build themes.

Intel has prepared the Core Ultra 5-238V, a Lunar Lake-MX CPU that integrates 32 GB of LPDDR5X memory into the CPU package. This new design represents a significant departure from the traditional approach of using separate memory modules, promising enhanced performance and efficiency, similar to what Apple is doing with its M series of processors. The Core Ultra 5-238V is the first of its kind for Intel to hit mass consumers. Previous attempt was with Lakefield, which didn't take off, but had advanced 3D stacked Foveros packaging. With 32 GB of high-bandwidth, low-power LPDDR5X memory directly integrated into the CPU package, the Core Ultra 5-238V eliminates the need for separate memory modules, reducing latency and improving overall system responsiveness. This seamless integration results in faster data transfer rates and lower power consumption with LPDDR5X memory running at 8533 MT.

Applications that demand intensive memory usage, such as video editing, 3D rendering, and high-end gaming, will be the first to experience performance gains. Users can expect smoother multitasking, quicker load times, and more efficient handling of memory-intensive tasks. The Core Ultra 5-238V is equipped with four big Lion Cove and four little Skymont cores, in combination with seven Xe2-LPG cores based on Battlemage GPU microarchitecture. The bigger siblings to Core Ultra 5, the Core Ultra 7 series, will feature eight Xe2-LPG cores instead of seven, with the same CPU core count, while all of them will run the fourth generation NPU.

Patriot Memory, a renowned name in performance memory and storage solutions, has teamed up with MSI, an innovator in gaming hardware, to unleash the Viper Xtreme 5 RGB DDR5 MPOWER Series - an extreme-speed DDR5 memory kit crafted for gamers, overclockers, and power users. This cutting-edge collaboration between the two brands combines blistering data rates up to 8000MT/s with massive 32 GB (16 GB x2) or 48 GB (24 GB x2) capacities. The Viper Xtreme 5 RGB DDR5 MPOWER series unleashes a torrent of memory bandwidth, turbocharging gaming rigs, content creation workstations, and other high-intensity applications demanding extreme responsiveness and throughput.

Optimized for Maximum Overclocking Potential
Intel XMP 3.0 certified for seamless plug-and-play overclocking on the latest Intel platforms, the Xtreme 5 RGB DDR5 MPOWER kit also integrates with MSI's user-friendly EZ Dashboard utility. This enables granular control over advanced timings and voltages to extract every last drop of performance.

NEO Semiconductor, a leading developer of innovative technologies for 3D NAND flash and DRAM memory, today announced a performance boosting Floating Body Cell Mechanism for 3D X-DRAM. Andy Hsu, Founder & CEO presented groundbreaking Technology CAD (TCAD) simulation results for NEO's 3D X-DRAM during the 16th IEEE International Memory Workshop (IMW) 2024 in Seoul, Republic of Korea.

Neo Semiconductor reveals a unique performance boosting mechanism called Back-gate Channel-depth Modulation (BCM) for Floating Body Cell that can increase data retention by 40,000X and sensing window by 20X.

Micron Technology, Inc., today announced the availability of Crucial LPCAMM2, the disruptive next-generation laptop memory form factor that features LPDDR5X mobile memory to level up laptop performance for professionals and creators. Consuming up to 58% less active power and with a 64% space savings compared to DDR5 SODIMMs, LPCAMM2 delivers higher bandwidth and dual-channel support with a single module. LPCAMM2 is an ideal high-performance memory solution for handling AI PC and complex workloads and is compatible with the powerful and versatile Lenovo ThinkPad P1 Gen 7 mobile workstations.

"LPCAMM2 is a game-changer for mobile workstation users who want to enjoy the benefits of the latest mobile high performance memory technology without sacrificing superior performance, upgradeability, power efficiency or space," said Jonathan Weech, senior director of product marketing for Micron's Commercial Products Group. "With LPCAMM2, we are delivering a future-proof memory solution, enabling faster speeds and longer battery life to support demanding creative and AI workloads."

SK hynix participated in the first-ever Compute Express Link Consortium Developers Conference (CXL DevCon) held in Santa Clara, California from April 30-May 1. Organized by a group of more than 240 global semiconductor companies known as the CXL Consortium, CXL DevCon 2024 welcomed a majority of the consortium's members to showcase their latest technologies and research results.

CXL is a technology that unifies the interfaces of different devices in a system such as semiconductor memory, storage, and logic chips. As it can increase system bandwidth and processing capacity, CXL is receiving attention as a key technology for the AI era in which high performance and capacity are essential. Under the slogan "Memory, The Power of AI," SK hynix showcased a range of CXL products at the conference that are set to strengthen the company's leadership in AI memory technology.

SK hynix held a press conference unveiling its vision and strategy for the AI era today at its headquarters in Icheon, Gyeonggi Province, to share the details of its investment plans for the M15X fab in Cheongju and the Yongin Semiconductor Cluster in Korea and the advanced packaging facilities in Indiana, U.S.

The event, hosted by theChief Executive Officer Kwak Noh-Jung, three years before the May 2027 completion of the first fab in the Yongin Cluster, was attended by key executives including the Head of AI Infra Justin (Ju-Seon) Kim, Head of DRAM Development Kim Jonghwan, Head of the N-S Committee Ahn Hyun, Head of Manufacturing Technology Kim Yeongsik, Head of Package & Test Choi Woojin, Head of Corporate Strategy & Planning Ryu Byung Hoon, and the Chief Financial Officer Kim Woo Hyun.

Micron Technology, Inc. (Nasdaq: MU), today announced it is leading the industry by validating and shipping its high-capacity monolithic 32Gb DRAM die-based 128 GB DDR5 RDIMM memory in speeds up to 5,600 MT/s on all leading server platforms. Powered by Micron's industry-leading 1β (1-beta) technology, the 128 GB DDR5 RDIMM memory delivers more than 45% improved bit density, up to 22% improved energy efficiency and up to 16% lower latency over competitive 3DS through-silicon via (TSV) products.

Micron's collaboration with industry leaders and customers has yielded broad adoption of these new high-performance, large-capacity modules across high-volume server CPUs. These high-speed memory modules were engineered to meet the performance needs of a wide range of mission-critical applications in data centers, including artificial intelligence (AI) and machine learning (ML), high-performance computing (HPC), in-memory databases (IMDBs) and efficient processing for multithreaded, multicore count general compute workloads. Micron's 128 GB DDR5 RDIMM memory will be supported by a robust ecosystem including AMD, Hewlett Packard Enterprise (HPE), Intel, Supermicro, along with many others.

Rambus Inc. (NASDAQ: RMBS), a premier chip and silicon IP provider making data faster and safer, today announced the availability of its new family of state-of-the-art DDR5 server Power Management ICs (PMICs), including an industry-leading extreme current device for high-performance applications. With this new family of server PMICs, Rambus offers module manufacturers a complete DDR5 RDIMM memory interface chipset supporting a broad range of data center use cases.

"Advanced data center workloads like generative AI require the highest bandwidth and capacity server RDIMMs tailored to meet ever-increasing memory needs of a growing data pipeline," said Sean Fan, chief operating officer at Rambus. "With the addition of this new family of server PMICs, we expand our foundational technology and offer customers a comprehensive memory interface chipset that supports multiple DDR5 server platform generations."

According to The Information, in a strategic maneuver to circumvent the constraints imposed by US sanctions, Huawei is accelerating efforts to establish domestic production capabilities for High Bandwidth Memory (HBM) within China. This move addresses the limitations that have hampered the company's advancements in AI and high-performance computing (HPC) sectors. HBM technology plays a pivotal role in enhancing the performance of AI and HPC processors by mitigating memory bandwidth bottlenecks. Recognizing its significance, Huawei has assembled a consortium comprising memory manufacturers backed by the Chinese government and prominent semiconductor companies like Fujian Jinhua Integrated Circuit. This consortium is focused on advancing HBM2 memory technology, which is crucial for Huawei's Ascend-series processors for AI applications.

Huawei's initiative comes at a time when the company faces challenges in accessing HBM from external sources, impacting the availability of its AI processors in the market. Despite facing obstacles such as international regulations restricting the sale of advanced chipmaking equipment to China, Huawei's efforts underscore China's broader push for self-sufficiency in critical technologies essential for AI and supercomputing. By investing in domestic HBM production, Huawei aims to secure a stable supply chain for these vital components, reducing reliance on external suppliers. This strategic shift not only demonstrates Huawei's resilience in navigating geopolitical challenges but also highlights China's determination to strengthen its technological independence in the face of external pressures. As the global tech landscape continues to evolve, Huawei's move to develop homegrown HBM memory could have far-reaching implications for China's AI and HPC capabilities, positioning the country as a significant player in the memory field.

SK hynix showcased its next-generation technologies and strengthened key partnerships at the TSMC 2024 Technology Symposium held in Santa Clara, California on April 24. At the event, the company displayed its industry-leading HBM AI memory solutions and highlighted its collaboration with TSMC involving the host's CoWoS advanced packaging technology.

TSMC, a global semiconductor foundry, invites its major partners to this annual conference in the first half of each year so they can share their new products and technologies. Attending the event under the slogan "Memory, the Power of AI," SK hynix received significant attention for presenting the industry's most powerful AI memory solution, HBM3E. The product has recently demonstrated industry-leading performance, achieving input/output (I/O) transfer speed of up to 10 gigabits per second (Gbps) in an AI system during a performance validation evaluation.

Today, we have the latest round of leaks that suggest that AMD's upcoming RDNA 4 graphics cards, codenamed the "RX 8000-series," might continue to rely on GDDR6 memory modules. According to Kepler on X, the next-generation GPUs from AMD are expected to feature 18 Gbps GDDR6 memory, marking the fourth consecutive RDNA architecture to employ this memory standard. While GDDR6 may not offer the same bandwidth capabilities as the newer GDDR7 standard, this decision does not necessarily imply that RDNA 4 GPUs will be slow performers. AMD's choice to stick with GDDR6 is likely driven by factors such as meeting specific memory bandwidth requirements and cost optimization for PCB designs. However, if the rumor of 18 Gbps GDDR6 memory proves accurate, it would represent a slight step back from the 18-20 Gbps GDDR6 memory used in AMD's current RDNA 3 offerings, such as the RX 7900 XT and RX 7900 XTX GPUs.

AMD's first generation RDNA used GDDR6 with 12-14 Gbps speeds, RDNA 2 came with GDDR6 at 14-18 Gbps, and the current RDNA 3 used 18-20 Gbps GDDR6. Without an increment in memory generation, speeds should stay the same at 18 Gbps. However, it is crucial to remember that leaks should be treated with skepticism, as AMD's final memory choices for RDNA 4 could change before the official launch. The decision to use GDDR6 versus GDDR7 could have significant implications in the upcoming battle between AMD, NVIDIA, and Intel's next-generation GPU architectures. If AMD indeed opts for GDDR6 while NVIDIA pivots to GDDR7 for its "Blackwell" GPUs, it could create a disparity in memory bandwidth performance between the competing products. All three major GPU manufacturers—AMD, NVIDIA, and Intel with its "Battlemage" architecture—are expected to unveil their next-generation offerings in the fall of this year. As we approach these highly anticipated releases, more concrete details on specifications and performance capabilities will emerge, providing a clearer picture of the competitive landscape.

SK hynix Inc. announced today that it has recently signed a memorandum of understanding with TSMC for collaboration to produce next-generation HBM and enhance logic and HBM integration through advanced packaging technology. The company plans to proceed with the development of HBM4, or the sixth generation of the HBM family, slated to be mass-produced from 2026, through this initiative.

SK hynix said the collaboration between the global leader in the AI memory space and TSMC, a top global logic foundry, will lead to more innovations in HBM technology. The collaboration is also expected to enable breakthroughs in memory performance through trilateral collaboration between product design, foundry, and memory provider. The two companies will first focus on improving the performance of the base die that is mounted at the very bottom of the HBM package. HBM is made by stacking a core DRAM die on top of a base die that features TSV technology, and vertically connecting a fixed number of layers in the DRAM stack to the core die with TSV into an HBM package. The base die located at the bottom is connected to the GPU, which controls the HBM.

Samsung Electronics, a world leader in advanced memory technology, today announced that it has developed the industry's first LPDDR5X DRAM supporting the industry's highest performance of up to 10.7 gigabits-per-second (Gbps). Leveraging 12 nanometer (nm)-class process technology, Samsung has achieved the smallest chip size among existing LPDDRs, solidifying its technological leadership in the low-power DRAM market.

"As demand for low-power, high-performance memory increases, LPDDR DRAM is expected to expand its applications from mainly mobile to other areas that traditionally require higher performance and reliability such as PCs, accelerators, servers and automobiles," said YongCheol Bae, Executive Vice President of Memory Product Planning of the Memory Business at Samsung Electronics. "Samsung will continue to innovate and deliver optimized products for the upcoming on-device AI era through close collaboration with customers." With the surge in AI applications, on-device AI, which enables direct processing on devices, is becoming increasingly crucial, underscoring the need for low-power, high-performance LPDDR memory.

Corsair today announced it is entering the DDR5 Workstation market with the introduction of a range of WS DDR5 RDIMM memory kits. Engineered to offer uncompromising performance and reliability, these ECC RDIMM kits redefine the capabilities of the newest workstations, and are compatible with the latest 4th Gen Intel Xeon and AMD Ryzen Threadripper 7000 processors.

This new range of memory kits boasts capacities of up to 256 GB, setting a new standard for memory-intensive tasks such as high-resolution media editing, 3D rendering, and AI training. Rigorously tested and carefully screened, these modules surpass JEDEC specifications with tighter timings and higher frequencies, ensuring optimal performance for the most demanding workloads.

V-COLOR Technology Inc. unveiled its latest breakthrough in memory technology, the Manta XFinity series, now boasting speeds of up to DDR5-8600 with XMP profile. This series is already gaining recognition in the overclocking community by securing the 3rd spot on the Memory Frequency ranking in HWBOT, and is ready to create even larger impacts with its enhanced overclocking capabilities. Tested on the new ASRock Phantom Gaming Z790I Lightning Wi-Fi, and PHANTOM GAMING B760I Lightning Wi-Fi with Intel Core 14th Gen CPUs, this advancement ensures unmatched performance and reliability for enthusiasts and professionals alike.

Samsung Electronics America, the leader in advanced memory technology, today introduced the latest iteration of its EVO Select and EVO Plus microSD cards, designed for mobile devices and handheld gaming consoles. The Samsung EVO Select and EVO Plus microSD cards boast increased transfer speeds of up to 160 MB/s, a 23% increase over their predecessors. They offer a turnkey way for everyday users and gamers to add storage space to their devices for content like games, files, photos, and videos.

"With the mobile and handheld gaming market on the rise, we sought to make data transfers on those devices even faster with these updated EVO Select and EVO Plus lines," said Jose Hernandez, Senior Director of Memory Product Marketing at Samsung. "We also heard the need for more space options like a 1 TB memory card for digital files like games, video footage from phones, cameras and drones, photos, and creative designs. With this addition to the lineup, you can be confident you'll have plenty of space, fast speeds and the durability needed to last for years to come."

Introspect Technology, a JEDEC member and a leading manufacturer of test and measurement instruments, announced today that it has shipped the M5512 GDDR7 Memory Test System, the world's first commercial solution for testing JEDEC's newly minted JESD239 Graphics Double Data Rate (GDDR7) SGRAM specification. This category-creating solution enables graphics memory engineers, GPU design engineers, product engineers in both memory and GPU spaces, and system integrators to rapidly bring up new GDDR7 memory devices, debug protocol errors, characterize signal integrity, and perform detailed memory read/write functional stress testing without requiring any other tool.

The GDDR7 specification is the latest industry standard that is aimed at the creation of high-bandwidth and high-capacity memory implementations for graphics processing, artificial intelligence (AI), and AI-intensive networking. Featuring pulse-amplitude modulation (PAM) and an improved signal to noise ratio compared to other PAM4 standards used in networking, the GDDR7 PAM3 modulation technology achieves greater power-efficiency while significantly increasing data transmission bandwidth over constrained electrical channels.

On February 26, 2024, AMD received new research related to an industry-wide DRAM issue documented in "ZENHAMMER: Rowhammering Attacks on AMD Zen-based Platforms" from researchers at ETH Zurich. The research demonstrates performing Rowhammer attacks on DDR4 and DDR5 memory using AMD "Zen" platforms. Given the history around Rowhammer, the researchers do not consider these rowhammering attacks to be a new issue.

Mitigation
AMD continues to assess the researchers' claim of demonstrating Rowhammer bit flips on a DDR5 device for the first time. AMD will provide an update upon completion of its assessment.

Samsung is ready with a GDDR7 memory chip rated at an oddly-specific 28 Gbps. This speed aligns with the reported default memory speeds of next-generation NVIDIA GeForce RTX "Blackwell" GPUs. The Samsung GDDR7 memory chip bearing model number K4VAF325ZC-SC28, pictured below, ticks at 3500 MHz, yielding 28 Gbps (GDDR7-effective) memory speeds, and comes with a density of 16 Gbit (2 GB). This isn't Samsung's only GDDR7 chip at launch, the company also has a 32 Gbps high performance part that it built in hopes that certain high-end SKUs or professional graphics cards may implement it. The 32 Gbps GDDR7 chip, bearing the chip model number K4VAF325ZC-SC32, offers the same 16 Gbit density, but at a higher 4000 MHz clock. The Samsung website part-identification pages for both chips say that the parts are sampling to customers, which is usually just before it enters mass-production, and is marked "shipping."

Without making much noise, AMD lifted the memory overclocking limits of the Radeon RX 7900 GRE graphics card with its latest Adrenalin 24.3.1 WHQL drivers, TechPowerUp found. The changelog is a bit vague and states "The maximum memory tuning limit may be incorrectly reported on AMD Radeon RX 7900 GRE graphics products."—we tested it. The RX 7900 GRE has been around since mid-2023, but gained prominence as the company gave it a global launch in February 2024, to help AMD better compete with the NVIDIA GeForce RTX 4070 Super. Before this, the RX 7900 GRE had started out its lifecycle as a special edition product confined to China, and its designers had ensured that it came with just the right performance positioning that didn't end up disrupting other products in the AMD stack. One of these limitations had to do with the memory overclocking potential, which was probably put in place to ensure that the RX 7900 GRE has a near-identical total board power as the RX 7800 XT.

Shortly after the global launch of the RX 7900 GRE, and responding to drama online, AMD declared the limited memory overclocking range a bug and promised a fix. The overclocking limits are defined in the graphics card VBIOS, so increasing those limits would mean shipping BIOS updates for over a dozen SKUs from all the major vendors, and requiring users to upgrade it by themselves. Such a solution isn't very practical, so AMD implemented a clock limit override in their new drivers, which reprograms the power limits on the GPU during boot-up. Nicely done, good job AMD!

Samsung Electronics showed off its latest graphics memory innovations at GTC, with an exhibit of its new 32 Gbps GDDR7 memory chip. The chip is designed to power the next generation of consumer and professional graphics cards, and some models of NVIDIA's GeForce RTX "Blackwell" generation are expected to implement GDDR7. The chip Samsung showed off at GTC is of the highly relevant 16 Gbit density (2 GB). This is important, as NVIDIA is rumored to keep graphics card memory sizes largely similar to where they currently are, while only focusing on increasing memory speeds.

The Samsung GDDR7 chip shown is capable of its 32 Gbps speed at a DRAM voltage of just 1.1 V, which beats the 1.2 V that's part of JEDEC's GDDR7 specification, which along with other power management innovations specific to Samsung, translates to a 20% improvement in energy efficiency. Although this chip is capable of 32 Gbps, NVIDIA isn't expected to give its first GeForce RTX "Blackwell" graphics cards that speed, and the first SKUs are expected to ship with 28 Gbps GDDR7 memory speeds, which means NVIDIA could run this Samsung chip at a slightly lower voltage, or with better timings. Samsung also made some innovations with the package substrate, which decreases thermal resistance by 70% compared to its GDDR6 chips. Both NVIDIA and AMD are expected to launch their first discrete GPUs implementing GDDR7, in the second half of 2024.

SK hynix Inc. announced today that it has begun volume production of HBM3E, the newest AI memory product with ultra-high performance, for supply to a customer from late March. The company made public its success with the HBM3E development just seven months ago. SK hynix being the first provider of HBM3E, a product with the best performing DRAM chips, extends its earlier success with HBM3. The company expects a successful volume production of HBM3E, along with its experiences also as the industry's first provider of HBM3, to help cement its leadership in the AI memory space.

In order to build a successful AI system that processes a huge amount of data quickly, a semiconductor package should be composed in a way that numerous AI processors and memories are multi-connected. Global big tech companies have been increasingly requiring stronger performance of AI semiconductor and SK hynix expects its HBM3E to be their optimal choice that meets such growing expectations.

MemVerge, a leader in AI-first Big Memory Software, has joined forces with Micron to unveil a groundbreaking solution that leverages intelligent tiering of CXL memory, boosting the performance of large language models (LLMs) by offloading from GPU HBM to CXL memory. This innovative collaboration is being showcased in Micron booth #1030 at GTC, where attendees can witness firsthand the transformative impact of tiered memory on AI workloads.

Charles Fan, CEO and Co-founder of MemVerge, emphasized the critical importance of overcoming the bottleneck of HBM capacity. "Scaling LLM performance cost-effectively means keeping the GPUs fed with data," stated Fan. "Our demo at GTC demonstrates that pools of tiered memory not only drive performance higher but also maximize the utilization of precious GPU resources."

The mid-range AMD Radeon RX 5600 XT is not supposed to have 16 GB of video memory, but the same hardware modders from Brazil behind the recent GeForce RTX 2080 16 GB mod, had other ideas for the card. They have not only increased the memory size to 16 GB through memory chip replacement, but also succeeded in widening its memory bus to 256-bit. The RX 5600 XT was launched in 2018 with 6 GB of 14 Gbps GDDR6 memory over a 192-bit memory interface. The card is cut down from the 7 nm "Navi 10" silicon powering the RX 5700 series, by enabling 36 out of 40 compute units (the same count as the RX 5700), but with a truncated 192-bit memory bus wired to 6 GB of memory (and so 25% lower memory bandwidth).

Paulo Gomes and Ronaldo Buassali pulled off the daring Radeon RX 5600 XT memory mod, which involves not just increasing the memory size from 6 GB to 16 GB, but also widening the memory bus from 192-bit to 256-bit. Since the RX 5600 XT is based on the same "Navi 10" GPU as the RX 5700, custom-design graphics cards tend to reuse PCB designs from the RX 5700 series, and have two vacant memory pads that are sometimes exposed and even balled. The mod involves three key stages—to replace the six 8 Gbit GDDR6 memory chips with eight 16 Gbit ones; to add the required electrical SMDs and VRM components for the two additional memory chips; and lastly, to give the card a modified BIOS that can let it play with the new memory configuration. The "Navi 10" silicon also powers certain Radeon Pro graphics cards with 16 GB of memory using 16 Gbit memory chips, so that could be the starting point for the BIOS mod.