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Corsair MP510 960 GB (Kioxia BiCS3)

960 GB
Capacity
Phison E12
Controller
TLC
Flash
PCIe 3.0 x4
Interface
M.2 2280
Form Factor
Package
Package
PCB Front
AnandTech
PCB Front
PCB Back
Tom's Hardware
PCB Back
DRAM
Tom's Hardware
DRAM
Flash
Tom's Hardware
Flash
SSD Controller
Controller
NAND Die
NAND Die
The Corsair MP510 is a solid-state drive in the M.2 2280 form factor, launched on October 16th, 2016. It is available in capacities ranging from 240 GB to 1.9 TB. This page reports specifications for the 960 GB variant. With the rest of the system, the Corsair MP510 interfaces using a PCI-Express 3.0 x4 connection. The SSD controller is the PS5012-E12-27 from Phison, a DRAM cache chip is available. Corsair has installed 64-layer TLC NAND flash on the MP510, the flash chips are made by Toshiba. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are soaked up more quickly. The cache is sized at 30 GB, once it is full, writes complete at 1050 MB/s. The MP510 is rated for sequential read speeds of up to 3,480 MB/s and 3,000 MB/s write; random IOPS reach up to 610K for reads and 570K for writes.
At its launch, the SSD was priced at 240 USD. The warranty length is set to five years, which is an excellent warranty period. Corsair guarantees an endurance rating of 1700 TBW, a good value.

Solid-State-Drive

Capacity: 960 GB
Variants: 240 GB 480 GB 960 GB 1.9 TB
Overprovisioning: 129.9 GB / 14.5 %
Production: Active
Released: Oct 16th, 2016
Price at Launch: 240 USD
Part Number: CSSD-F960GBMP510B
Market: Consumer

Physical

Form Factor: M.2 2280 (Double-Sided)
Interface: PCIe 3.0 x4
Protocol: NVMe 1.3
Power Draw: 0.43 W (Idle)
3.0 W (Avg)
4.9 W (Max)

Controller

Manufacturer: Phison
Name: PS5012-E12-27
Architecture: ARM 32-bit Cortex-R5
Core Count: Quad-Core
Frequency: 667 MHz
Foundry: TSMC
Process: 28 nm
Flash Channels: 8 @ 667 MT/s
Chip Enables: 4
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Toshiba
Name: BiCS3
Part Number: TABBG55AIV
Type: TLC
Technology: 64-layer
Speed: 533 MT/s
Capacity: 4 chips @ 2 Tbit
ONFI: 3.2
Toggle: 2.0
Topology: Charge Trap
Process: 19 nm
Dies per Chip: 8 dies @ 256 Gbit
Planes per Die: 2
Decks per Die: 2
Read Time (tR): 80 µs
Program Time (tProg): 695 µs
Die Read Speed: 400 MB/s
Die Write Speed: 46 MB/s
Endurance:
(up to)
3000 P/E Cycles
(30000 in SLC Mode)
Page Size: 16 KB
Block Size: 768 Pages
Plane Size: 1478 Blocks

DRAM Cache

Type: DDR4-2400 CL17
Name: SK Hynix H5AN4G8NBJR-UHC
Capacity: 1024 MB
(2x 512 MB)
Organization: 4Gx16

Performance

Sequential Read: 3,480 MB/s
Sequential Write: 3,000 MB/s
Random Read: 610,000 IOPS
Random Write: 570,000 IOPS
Endurance: 1700 TBW
Warranty: 5 Years
MTBF: 2.0 Million Hours
Drive Writes Per Day (DWPD): 1.0
SLC Write Cache: approx. 30 GB
(dynamic only)
Speed when Cache Exhausted: approx. 1050 MB/s

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • AES-256
RGB Lighting: No
PS5 Compatible: No

Reviews

Notes

Controller:

2 main cores using Cortex-R5 clocked at 667 MHz with CoXProcessor technology (one additional dual-core) Cortex-R5 clocked at a lower clock for better efficience.

NAND Die:

Read latency:
tR: 64µs (SBL)
tR: 80µs (ABL)

Jun 2nd, 2024 03:50 EDT change timezone

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