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Kingston KC2000 250 GB

250 GB
Capacity
SM2262ENG
Controller
TLC
Flash
PCIe 3.0 x4
Interface
M.2 2280
Form Factor
Package
Package
SSD Controller
Controller
NAND Die
NAND Die
The Kingston KC2000 was a solid-state drive in the M.2 2280 form factor, launched in May 2019, that is no longer in production. It was available in capacities ranging from 250 GB to 2 TB. This page reports specifications for the 250 GB variant. With the rest of the system, the Kingston KC2000 interfaces using a PCI-Express 3.0 x4 connection. The SSD controller is the SM2262ENG from Silicon Motion, a DRAM cache chip is available. Kingston has installed 96-layer TLC NAND flash on the KC2000, the flash chips are made by Toshiba. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are absorbed more quickly. The cache is sized at 40 GB, once it is full, writes complete at 345 MB/s. The KC2000 is rated for sequential read speeds of up to 3,000 MB/s and 1,100 MB/s write; random IO reaches 350K IOPS for read and 200K for writes.
At its launch, the SSD was priced at 62 USD. The warranty length is set to five years, which is an excellent warranty period. Kingston guarantees an endurance rating of 150 TBW, a typical value for consumer SSDs.

Solid-State-Drive

Capacity: 250 GB
Variants: 250 GB 500 GB 1 TB 2 TB
Overprovisioning: 23.2 GB / 10.0 %
Production: End-of-life
Released: May 2019
Price at Launch: 62 USD
Part Number: SKC2000M8/250G
Market: Consumer

Physical

Form Factor: M.2 2280 (Double-Sided)
Interface: PCIe 3.0 x4
Protocol: NVMe 1.3
Power Draw: 0.00 W (Idle)
2.0 W (Avg)
7.0 W (Max)

Controller

Manufacturer: Silicon Motion
Name: SM2262ENG
Architecture: ARM 32-bit Cortex R5
Core Count: Dual-Core
Frequency: 625 MHz
Foundry: TSMC
Process: 28 nm
Flash Channels: 8 @ 800 MT/s
Chip Enables: 4
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Toshiba
Name: BiCS4
Type: TLC
Technology: 96-layer
Speed: 800 MT/s
Capacity: 4 chips @ 512 Gbit
ONFI: 4.0
Toggle: 3.0
Topology: Charge Trap
Process: 19 nm
Die Size: 86 mm²
(6.0 Gbit/mm²)
Dies per Chip: 1 die @ 512 Gbit
Planes per Die: 2
Decks per Die: 2
Word Lines: 109 per NAND String
88.1% Vertical Efficiency
Read Time (tR): 58 µs
Program Time (tProg): 561 µs
Die Read Speed: 551 MB/s
Die Write Speed: 57 MB/s
Endurance:
(up to)
3000 P/E Cycles
(30000 in SLC Mode)
Page Size: 16 KB
Block Size: 1152 Pages
Plane Size: 1822 Blocks

DRAM Cache

Type: DDR3L-1866 CL13
Name: Nanya NT5CC128M16JR-EK
Capacity: 256 MB
(1x 256 MB)
Organization: 2Gx16
Host-Memory-Buffer (HMB): N/A

Performance

Sequential Read: 3,000 MB/s
Sequential Write: 1,100 MB/s
Random Read: 350,000 IOPS
Random Write: 200,000 IOPS
Endurance: 150 TBW
Warranty: 5 Years
MTBF: 2.0 Million Hours
Drive Writes Per Day (DWPD): 0.3
SLC Write Cache: approx. 40 GB
(dynamic only)
Speed when Cache Exhausted: approx. 345 MB/s

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • AES-256
  • TCG Opal
RGB Lighting: No
PS5 Compatible: No

Reviews

Same Drive

This section lists other SSDs in our database using the exact same hardware components

Notes

Controller:

Controller clock speed might vary depending on the drive, from 575 MHz to 650 MHz

NAND Die:

Read latency tR: 58 µs (ABL)
tPROG with ~ 25% Overhead: ~ 750 µs (Avg - 42.7 MB/s per each die)

Jun 2nd, 2024 02:30 EDT change timezone

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