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Mancer Blink X1 240 GB (YS9082HC + Intel N38A)

240 GB
Capacity
YS9082HC
Controller
QLC
Flash
SATA 6 Gbps
Interface
2.5"
Form Factor

Multiple hardware versions found.

Performance could vary due to unannounced flash/controller changes.

Back
Back
PCB Front
Gabriel Ferraz
PCB Front
Flash
Gabriel Ferraz
Flash
SSD Controller
Controller
NAND Die
NAND Die
The Mancer Blink X1 is a solid-state drive in the 2.5" form factor, launched in 2022. It is available in capacities ranging from 240 GB to 512 GB. This page reports specifications for the 240 GB variant. With the rest of the system, the Mancer Blink X1 interfaces using a SATA 6 Gbps connection. The SSD controller is the YS9082HC from Yeestor, a DRAM cache is not available. Mancer has installed 144-layer QLC NAND flash on the Blink X1, the flash chips are made by Intel. Please note that this SSD is sold in multiple variants with different NAND flash or controller, which could affect performance, the "Notes" section at the end of this page has more info. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are processed more quickly. The Blink X1 is rated for sequential read speeds of up to 500 MB/s and 440 MB/s write; random IOPS reach up to 50K for reads and 58K for writes.
At its launch, the SSD was priced at 17 USD. The warranty length is set to one year, which is quite short for the SSD industry. Mancer guarantees an endurance rating of 50 TBW, a good value.

Solid-State-Drive

Capacity: 240 GB
Variants: 240 GB 512 GB
Hardware Versions:
Overprovisioning: 32.5 GB / 14.5 %
Production: Active
Released: 2022
Price at Launch: 17 USD
Part Number: MCR-BLKX1-240
Market: Consumer

Physical

Form Factor: 2.5"
Interface: SATA 6 Gbps
Protocol: AHCI
Power Draw: 0.06 W (Idle)
Unknown (Avg)
Unknown (Max)

Controller

Manufacturer: Yeestor
Name: YS9082HC
Architecture: ARM 32-bit Cortex-R5
Core Count: Dual-Core
Foundry: TSMC
Process: 55 nm
Flash Channels: 4 @ 400 MT/s
Chip Enables: 4

NAND Flash

Manufacturer: Intel
Name: N38A
Type: QLC
Technology: 144-layer
Speed: 1200 MT/s
Capacity: 2 chips @ 1 Tbit
Topology: Replacement Gate
Die Size: 80 mm²
(12.8 Gbit/mm²)
Dies per Chip: 1 die @ 1 Tbit
Planes per Die: 4
Decks per Die: 3
Word Lines: 161 per NAND String
89.4% Vertical Efficiency
Read Time (tR): 85 µs
Program Time (tProg): 1630 µs
Block Erase Time (tBERS): 35 ms
Die Read Speed: 752 MB/s
Die Write Speed: 40 MB/s
Endurance:
(up to)
1500 P/E Cycles
Page Size: 16 KB
Block Size: 9216 Pages
Plane Size: 1032 Blocks

DRAM Cache

Type: None

Performance

Sequential Read: 500 MB/s
Sequential Write: 440 MB/s
Random Read: 50,000 IOPS
Random Write: 58,000 IOPS
Endurance: 50 TBW
Warranty: 1 Year
MTBF: 1.0 Million Hours
Drive Writes Per Day (DWPD): 0.6
SLC Write Cache: Yes

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • Unknown
RGB Lighting: No
PS5 Compatible: No

Notes

NAND Die:

Block size is 48MB
Block Erase Time (tBERS): Maximum is 35 ms

Jun 2nd, 2024 03:05 EDT change timezone

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