Capacity: | 4 TB (4000 GB) |
---|---|
Variants: | 1 TB 2 TB 4 TB |
Overprovisioning: | 370.7 GB / 10.0 % |
Production: | End-of-life |
Released: | Dec 16th, 2018 |
Price at Launch: | 600 USD |
Part Number: | MZ-76Q2T0B/AM |
Market: | Consumer |
Form Factor: | 2.5" |
---|---|
Interface: | SATA 6 Gbps |
Protocol: | AHCI |
Power Draw: |
0.04 W (Idle) 3.2 W (Avg) Unknown (Max) |
Manufacturer: | Samsung |
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Name: | MJX Maru (S4LR030) |
Architecture: | ARM 32-bit Cortex R4 |
Core Count: | Triple-Core |
Frequency: | 1,000 MHz |
Foundry: | Samsung FinFET |
Process: | 14 nm |
Flash Channels: | 8 @ 800 MT/s |
Chip Enables: | 8 |
Controller Features: | DRAM (enabled) |
Manufacturer: | Samsung |
---|---|
Name: | V-NAND V4 |
Part Number: | K9XVGB8J1M-CCK0 |
Type: | QLC |
Technology: | 64-layer |
Speed: | 1000 MT/s |
Capacity: | 4 chips @ 8 Tbit |
Topology: | Charge Trap |
Die Size: | 182 mm² (5.6 Gbit/mm²) |
Dies per Chip: | 8 dies @ 1 Tbit |
Planes per Die: | 2 |
Decks per Die: | 1 |
Word Lines: |
72 per NAND String
88.9% Vertical Efficiency |
Read Time (tR): | 140 µs |
Program Time (tProg): | 3000 µs |
Block Erase Time (tBERS): | 3.5 ms |
Die Write Speed: | 12 MB/s |
Page Size: | 16 KB |
Block Size: | 1024 Pages |
Type: | LPDDR4-1866 |
---|---|
Name: | SAMSUNG K4F8E6D4HM8CH |
Capacity: |
4096 MB
(1x 4096 MB) |
Organization: | 32Gx16 |
Sequential Read: | 550 MB/s |
---|---|
Sequential Write: | 520 MB/s |
Random Read: | 96,000 IOPS |
Random Write: | 89,000 IOPS |
Endurance: | 1440 TBW |
Warranty: | 5 Years |
MTBF: | 1.5 Million Hours |
Drive Writes Per Day (DWPD): | 0.2 |
SLC Write Cache: |
approx. 78 GB
(72 GB Dynamic + 6 GB Static) |
Speed when Cache Exhausted: | approx. 160 MB/s |
TRIM: | Yes |
---|---|
SMART: | Yes |
Power Loss Protection: | No |
Encryption: |
|
RGB Lighting: | No |
PS5 Compatible: | No |
Drive:NAND Speed Bus: Up to 1 GT/s. Controller:Controller Clock speed: Up to 1 GHz. NAND Die:Or could be 70 Word Lines. |